Электронная книга: Tsunenobu Kimoto «Silicon Carbide. Volume 1: Growth, Defects, and Novel Applications»
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This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a«Who's Who» of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Издательство: "John Wiley&Sons Limited"
ISBN: 9783527629060 электронная книга Купить за 18300.47 руб и скачать на Litres |
Другие книги автора:
| Книга | Описание | Год | Цена | Тип книги |
|---|---|---|---|---|
| Silicon Carbide, Volume 2. Power Devices and Sensors | Silicon Carbide– this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field… — John Wiley&Sons Limited, электронная книга Подробнее... | электронная книга | ||
| Fundamentals of Silicon Carbide Technology. Growth, Characterization, Devices and Applications | A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material… — John Wiley&Sons Limited, электронная книга Подробнее... | электронная книга |
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